| 发明名称 |
OXIDE, SEMICONDUCTOR DEVICE, MODULE, AND ELECTRONIC DEVICE |
| 摘要 |
To provide a crystalline oxide semiconductor which can be used as a semiconductor of a transistor or the like. The crystalline oxide semiconductor is an oxide over a surface and includes a plurality of flat-plate-like In—Ga—Zn oxides. Each of the plurality of flat-plate-like In—Ga—Zn oxides has a crystal structure and includes a first layer, a second layer, and a third layer. The first layer includes a gallium atom, a zinc atom, and an oxygen atom. The second layer includes an indium atom and an oxygen atom. The third layer includes a gallium atom, a zinc atom, and an oxygen atom. A flat plane of each of the plurality of flat-plate-like In—Ga—Zn oxides is substantially perpendicular to a normal vector of the surface. |
| 申请公布号 |
US2015236162(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201514624975 |
申请日期 |
2015.02.18 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei |
| 分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide comprising a plurality of flat-plate-like In—Ga—Zn oxides over a surface,
wherein each of the plurality of flat-plate-like In—Ga—Zn oxides has a crystal structure, wherein each of the plurality of flat-plate-like In—Ga—Zn oxides includes a first layer, a second layer, and a third layer, wherein the first layer includes a gallium atom, a zinc atom, and an oxygen atom, wherein the second layer includes an indium atom and an oxygen atom, wherein the third layer includes a gallium atom, a zinc atom, and an oxygen atom, and wherein a flat plane of each of the plurality of flat-plate-like In—Ga—Zn oxides is substantially perpendicular to a normal vector of the surface. |
| 地址 |
Atsugi-shi JP |
