SEMICONDUCTOR DEVICE HAVING HIGH FREQUENCY WIRING AND DUMMY METAL LAYER AT MULTILAYER WIRING STRUCTURE

摘要

A semiconductor device includes a semiconductor substrate, a first wiring layer including a plurality of first dummy metals provided inside an inductor wiring, a plurality of second dummy metals provided outside the inductor wiring, and a plurality of third dummy metals provided to overlap the inductor wiring in a plan view, and a second wiring layer provided between the semiconductor substrate and the first wiring layer. The second wiring layer includes the inductor wiring formed in the second wiring layer, a first region surrounding the inductor wiring which includes a plurality of fourth dummy metals, and a second region surrounding the first region which includes a plurality of fifth dummy metals. A density of the fourth dummy metals is lower than a density of the fifth dummy metals.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a first wiring layer including a plurality of first dummy metals provided inside an inductor wiring, a plurality of second dummy metals provided outside the inductor wiring, and a plurality of third dummy metals provided to overlap the inductor wiring in a plan view; and a second wiring layer provided between the semiconductor substrate and the first wiring layer, the second wiring layer including:
the inductor wiring formed in the second wiring layer;a first region surrounding the inductor wiring which includes a plurality of fourth dummy metals; anda second region surrounding the first region which includes a plurality of fifth dummy metals, wherein a density of the fourth dummy metals is lower than a density of the fifth dummy metals, and wherein a density difference between the densities of the fourth and fifth dummy metals is higher than a density difference among densities of the first, second, and third dummy metals.