| 摘要 |
A monolithically integrated white light-emitting device, including light- emitting diodes (LEDs) and laser diodes (LDs), comprised of a Ill-nitride substrate and semipolar, nonpolar or polar Ill-nitride layers. A first device structure has a smaller band gap than a second device structure; the first device structure is optically- pumped by the second device structure; the second device structure is electrically injected; and emissions from the first and second device structures are mixed to generate white light. These emissions may be yellow light mixed with blue light, or green and red light mixed with blue light. |
