FinFET with Metal Gate Stressor

摘要

A gate stressor for a fin field effect transistor (FinFET) device is provided. The gate stressor includes a floor, a first stressor sidewall, and a second stressor sidewall. The floor is formed on a first portion of a gate layer. The gate layer is disposed above a shallow trench isolation (STI) region. The first stressor sidewall formed on a second portion of the gate layer. The second portion of the gate layer is disposed on sidewalls of a fin. The second stressor sidewall formed on the third portion of the gate layer. The third portion of the gate layer is disposed on sidewalls of a structure spaced apart from the fin. The first stressor side wall and the second stressor sidewall do not exceed a height of the fin.

主权项

1. A fin field effect transistor (FinFET) device, comprising:
a first fin; a structure spaced apart from the first fin by a first shallow trench isolation (STI) region; a gate layer formed over the structure, the first STI region, and a channel of the first fin; and a gate stressor over a first portion of the gate layer disposed on the first STI region between the structure and the first fin and over a second portion of the gate layer disposed on sidewalls of the first fin and sidewalls of the structure.