DEVICES AND METHODS OF FORMING HIGHER TUNABILITY FINFET VARACTOR

摘要

Devices and methods for forming semiconductor devices with wider FinFETs for higher tunability of the varactor are provided. One method includes, for instance: obtaining an intermediate semiconductor device; applying a spacer layer over the semiconductor device; etching the semiconductor device to remove at least a portion of the spacer layer to expose the plurality of mandrels; removing the mandrels; etching the semiconductor device to remove a portion of the dielectric layer; forming at least one fin; and removing the spacer layer and the dielectric layer. One intermediate semiconductor device includes, for instance: a substrate; a dielectric layer over the substrate; a plurality of mandrels formed on the dielectric layer, the mandrels including a first set of mandrels and a second set of mandrels, wherein the first set of mandrels have a width twice as large as the second set of mandrels; and a spacer layer applied over the mandrels.

主权项

1. A method comprising:
obtaining an intermediate semiconductor device, comprising:
a substrate;a dielectric layer over the substrate; anda plurality of first mandrels formed on the dielectric layer, the plurality of mandrels comprising:
a first set of mandrels; anda second set of mandrels, wherein the first set of mandrels is abouttwice as wide as the second set of mandrels; applying a spacer layer over the intermediate semiconductor device; etching the intermediate semiconductor device to remove at least a portion of the spacer layer to expose the plurality of mandrels; removing the plurality of mandrels; etching the intermediate semiconductor device to remove at least a portion of the dielectric layer; forming at least one fin; and removing the spacer layer and the dielectric layer.