发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM, CONTAMINANT REMOVAL METHOD, AND DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography system capable of removing contaminants adhering to an optical member in the system, while minimizing deterioration of drawing quality.SOLUTION: A charged particle beam lithography system for drawing a pattern on a substrate by using a charged particle beam having an illuminance distribution is provided. The system has an irradiated member that is irradiated with a charged particle beam, and an adjustment section for adjusting the illuminance distribution of the charged particle beam. On the irradiated member that is irradiated with a charged particle beam, a low illuminance area where the illuminance of the charged particle beam is lower than a predetermined value appears, and contaminants adhere to the illuminance area on the irradiated member. The adjustment section adjusts the illuminance distribution of the charged particle beam so as to remove the contaminants adhering to the irradiated member.</p>
申请公布号 JP2015149449(A) 申请公布日期 2015.08.20
申请号 JP20140022775 申请日期 2014.02.07
申请人 CANON INC 发明人 NAKAYAMA TAKAHIRO;TERAJIMA SHIGERU;SANO KENTARO
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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