| 发明名称 |
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING |
| 摘要 |
Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface. |
| 申请公布号 |
US2015236118(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201514699859 |
申请日期 |
2015.04.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;KIM YOUNG-HEE;LAUER ISAAC;MURALIDHAR RAMACHANDRAN;PARK DAE-GYU;WANG XINHUI;YANG MIN |
| 分类号 |
H01L29/66;H01L29/45;H01L29/78;H01L29/08;H01L21/225;H01L21/324 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An atomic layer doping method comprising:
preparing a semiconducting surface; preparing a dopant gas mixture; and growing a dopant layer on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C., wherein the dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface. |
| 地址 |
ARMONK NY US |
