MEMORY CONTROLLER SUPPORTING RATE-COMPATIBLE PUNCTURED CODES

摘要

Apparatus and methods store data in a non-volatile solid state memory device according to a rate-compatible code, such as a rate-compatible convolutional code (RPCC). An example of such a memory device is a flash memory device. Data can initially be block encoded for error correction and detection. The block-coded data can be further convolutionally encoded. Convolutional-coded data can be punctured and stored in the memory device. The puncturing decreases the amount of memory used to store the data. Depending on conditions, the amount of puncturing can vary from no puncturing to a relatively high amount of puncturing to vary the amount of additional error correction provided and memory used. The punctured data can be decoded when data is to be read from the memory device.

主权项

1. A method of determining a code rate for a block of memory space in a non-volatile solid-state memory device, the method comprising:
determining whether a marginal condition exists for at least a portion of a block of data of the memory device; and decreasing a code rate used with the block if the marginal condition exists.