| 摘要 |
PROBLEM TO BE SOLVED: To easily and reliably obtain, with regard to a crystalline sample such as a chemical compound semiconductor device, a normal X-ray energy dependency spectrum unaffected by a disturbing diffraction line automatically without relying on manual labor, and obtain highly reliable high-accuracy information about a local structure.SOLUTION: There is provided an X-ray analysis method using an electron yield XAFS (X-ray Absorption Fine Structure) method, which, when irradiating a sample with an X-ray and obtaining the X-ray energy dependency of a current that flows due to electrons flying out of the sample or by ionization of a peripheral gas by the electrons, changes a direction of the sample relative to the irradiated X-ray and obtains the X-ray energy dependency (specifically, obtaining an X-ray energy dependency spectrum in at least three crystal orientations different from each other and determining that a spectrum in which two out of three kinds of spectrums thus obtained are the same is the normal spectrum, or obtaining the X-ray energy dependency spectrum while rotating and swinging the sample). |
