| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high breakdown voltage gallium nitride semiconductor device, suitable as a high breakdown voltage power device, while suppressing increase in the manufacturing cost, and to provide a manufacturing method therefor.SOLUTION: In a high breakdown voltage gallium nitride semiconductor device having a reverse breakdown voltage of 3000 V or more, where an n-type gallium nitride semiconductor layer 103, including a drift layer 107, is formed on the surface of an n-type gallium nitride self-supporting substrate 101, the carbon concentration is 3.0×10/cmor more in a region of the drift layer 107 where the electric field strength is 1.5MV/cm or less, when a maximum allowable voltage not causing the yield phenomenon is applied as a reverse bias.</p> |
