HIGH VOLTAGE TRENCH TRANSISTOR

摘要

A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having a gate electrode, first and second gate dielectric layers is formed in a trench. The trench has an upper trench portion and a lower trench portion. A field plate is formed in the trench. First and second diffusion regions are formed. The gate is displaced from the second diffusion region.

主权项

1. A semiconductor device comprising:
a substrate defined with a device region; a gate disposed in the substrate, wherein the gate comprises a gate electrode and a first gate dielectric layer disposed in a first trench, wherein the first trench defines an upper trench portion; a second trench disposed within the gate, wherein the second trench extends below the upper trench portion and defines a lower trench portion; a second gate dielectric layer disposed in the second trench, wherein the second gate dielectric layer at least lines the lower trench portion; a field plate disposed in the second trench, wherein the field plate fills the trench and is disposed adjacent to the gate; and first and second diffusion regions, wherein the gate is displaced from the second diffusion region.