SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.

主权项

1. A semiconductor device comprising:
a bit line contact; a bit line disposed on the bit line contact and electrically connected to the bit line contact; and a spacer disposed on a sidewall of the bit line contact and a sidewall of the bit line, wherein the spacer has a structure in which a first spacer with a first dielectric constant, a second spacer with a second dielectric constant, and a third spacer with a third dielectric constant are stacked, the second spacer having a different dielectric constant from those of the first and third spacers.