| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an art favorable to improve yield and reduce manufacturing cost in a manufacturing method of a semiconductor device with a structure having an inclined surface.SOLUTION: A semiconductor device manufacturing method comprises: a first process of forming on a silicon substrate, a member provided with an opening to make a part of a top face of the silicon substrate be an exposed surface; and a second process of etching the member by supplying a XeF-containing etching gas to the exposed surface and the member in a manner such that a thickness of the member increases with the distance from the exposed surface.</p> |
