发明名称 THERMAL METAL GROUND FOR INTEGRATED CIRCUIT RESISTORS
摘要 Metal thermal grounds are used for dissipating heat from integrated-circuit resistors. The resistors may be formed using a front end of line layer, for example, a titanium-nitride layer. A metal region (e.g., in a first metal layer) is located over the resistors to form a heat sink. An area of thermal posts connected to the metal region is also located over the resistor. The metal region can be connected to the substrate of the integrated circuit to provide a low impedance thermal path out of the integrated circuit.
申请公布号 US2015237709(A1) 申请公布日期 2015.08.20
申请号 US201414181187 申请日期 2014.02.14
申请人 QUALCOMM Incorporated 发明人 Mittal Arpit;Loke Alvin Leng Sun;Saeidi Mehdi;Drennan Patrick
分类号 H05K1/02;H01C1/01;H01C1/08 主分类号 H05K1/02
代理机构 代理人
主权项 1. An integrated circuit, comprising: a resistor; a metal region disposed parallel to and overlapping at least part of the resistor; and one or more thermal posts electrically connected to the metal region and disposed between the metal region and the resistor, the thermal posts electrically isolated from the resistor.
地址 San Diego CA US