| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a pillar-shaped silicon layer. A sidewall having a laminated structure including an insulating film and silicon resides on an upper sidewall of the pillar-shaped silicon layer. The silicon of the sidewall is electrically connected to a top of the pillar-shaped silicon layer. |
| 申请公布号 |
US2015236152(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201514696864 |
申请日期 |
2015.04.27 |
| 申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
| 分类号 |
H01L29/78;H01L29/06;H01L29/423 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a pillar-shaped silicon layer; and a sidewall having a laminated structure comprising an insulating film and silicon, the sidewall on an upper sidewall of the pillar-shaped silicon layer, wherein the silicon of the sidewall is electrically connected to a top of the pillar-shaped silicon layer. |
| 地址 |
Peninsula Plaza SG |
