HIGH GROWTH RATE PROCESS FOR CONFORMAL ALUMINUM NITRIDE

摘要

Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d). Increased growth rate and 100% step coverage and conformality are attained.

主权项

1. A method of processing a semiconductor substrate having features in a reaction chamber, the method comprising:
(a) exposing the substrate to an aluminum-containing precursor for a duration sufficient to substantially adsorb to a surface of the substrate; (b) purging the aluminum-containing precursor from the reaction chamber for a duration insufficient to remove substantially all of the aluminum-containing precursor from the gas phase; (c) exposing the substrate to a nitrogen-containing precursor for a duration sufficient to drive a thermally mediated reaction to form a layer of aluminum nitride on the surface of the substrate, wherein the layer of aluminum nitride is substantially conformal to the substrate and has a thickness of about 1.5 Å or greater; (d) purging the nitrogen-containing precursor in gas phase from the reaction chamber; and (e) repeating (a) through (d).