PATTERNING PROCESS

摘要

There is provided a patterning process that forms a negative pattern by developing using an organic solvent, using a resist top coat composition that not only reduces the effect from the environment on a resist film and effectively blocks OOB light, but also reduces the film loss of a resist pattern and the bridging between patterns, enhances the sensitivity of the resist film, and suppresses the emission of an outgas from the resist film. The patterning process includes the steps of forming a resist top coat on a photoresist film formed on a substrate, with the resist top coat using as a top base material a polymer having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group, in which m is 1 or 2, and p is 0

主权项

1. A patterning process comprising:
forming a resist top coat on a photoresist film on a substrate by using a resist top coat composition that contains a polymer having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group shown in the following general formula (1), wherein m is 1 or 2, and p is 0