| 摘要 |
PROBLEM TO BE SOLVED: To obtain a higher Q-value in a micro mechanical resonator using SiC.SOLUTION: SiC residue 107 is oxidized by performing thermal oxidation under the conditions of atmospheric pressure, pure oxygen atmosphere, and 1150°C 2 hours. The SiC residue 107 becomes SiOby oxidation, and the SiOis removed by hydrofluoric acid aqueous solution, thus bringing about a state where there is no residue on the substrate side back of a micro mechanical resonator structure 105. Thereafter, gas etching is performed for the micro mechanical resonator structure 105, thus smoothing the surface thereof. |
