| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which is easy to increase avalanche resistance while limiting an increase in on-resistance.SOLUTION: A semiconductor device 1 comprises: a semiconductor substrate 3 covered with a conductive layer 26 on a surface 3a side; and a connection member connected to a part of a top face 26a of the conductive layer 26. The semiconductor device comprises a high resistance part 5 with a structure having higher avalanche resistance than an outside part, which is arranged in a predetermined region of at least either of an internal position of a directly-below region AR located directly below a connection part 30a of the connection member 30 or a position adjacent to a peripheral part of the directly-below region AR and on the side farther from the directly-below region AR than the predetermined region.</p> |
