发明名称 |
MASK SHIFT RESISTANCE-INDUCTANCE METHOD FOR MULTIPLE PATTERNING MASK DESIGN AND A METHOD FOR PERFORMING THE SAME |
摘要 |
A system and method comprising providing a layout of an integrated circuit design, generating, by a processor, a plurality of multiple patterning decompositions from the layout, determining a maximum mask shift between the first mask and the second mask and simulating a worst-case performance value for each of the plurality of multiple patterning decompositions using one or more mask shifts within a range defined by the maximum mask shift. Further, each of the plurality of multiple patterning decompositions comprise patterns separated to a first mask and a second mask of a multiple patterning mask set. |
申请公布号 |
US2015234975(A1) |
申请公布日期 |
2015.08.20 |
申请号 |
US201414182859 |
申请日期 |
2014.02.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMAPNY, LTD. |
发明人 |
CHOU Chih-Cheng;LIU Te-Yu;SU Ke-Ying;LEE Hsien-Hsin Sean |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
providing a layout of an integrated circuit design; generating, by a processor, a plurality of multiple patterning decompositions from the layout, wherein each of the plurality of multiple patterning decompositions comprise patterns separated to a first mask and a second mask of a multiple patterning mask set; determining a maximum mask shift between the first mask and the second mask; and simulating a worst-case performance value for each of the plurality of multiple patterning decompositions using one or more mask shifts within a range defined by the maximum mask shift. |
地址 |
Hsinchu TW |