发明名称 MASK SHIFT RESISTANCE-INDUCTANCE METHOD FOR MULTIPLE PATTERNING MASK DESIGN AND A METHOD FOR PERFORMING THE SAME
摘要 A system and method comprising providing a layout of an integrated circuit design, generating, by a processor, a plurality of multiple patterning decompositions from the layout, determining a maximum mask shift between the first mask and the second mask and simulating a worst-case performance value for each of the plurality of multiple patterning decompositions using one or more mask shifts within a range defined by the maximum mask shift. Further, each of the plurality of multiple patterning decompositions comprise patterns separated to a first mask and a second mask of a multiple patterning mask set.
申请公布号 US2015234975(A1) 申请公布日期 2015.08.20
申请号 US201414182859 申请日期 2014.02.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMAPNY, LTD. 发明人 CHOU Chih-Cheng;LIU Te-Yu;SU Ke-Ying;LEE Hsien-Hsin Sean
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项 1. A method comprising: providing a layout of an integrated circuit design; generating, by a processor, a plurality of multiple patterning decompositions from the layout, wherein each of the plurality of multiple patterning decompositions comprise patterns separated to a first mask and a second mask of a multiple patterning mask set; determining a maximum mask shift between the first mask and the second mask; and simulating a worst-case performance value for each of the plurality of multiple patterning decompositions using one or more mask shifts within a range defined by the maximum mask shift.
地址 Hsinchu TW