| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of trenches in a semiconductor substrate, on opposite sides of a gate electrode of a P-type metal-oxide-semiconductor (PMOS) disposed on the semiconductor substrate. The method further includes forming an embedded silicon germanium layer inside the trenches, and forming a capping layer on the embedded silicon germanium layer, wherein the embedded silicon germanium layer and the capping layer are doped with boron (B). |
| 申请公布号 |
US2015236125(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201414582917 |
申请日期 |
2014.12.24 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
TU Ajin |
| 分类号 |
H01L29/66;H01L29/161;H01L29/167;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a plurality of trenches in a semiconductor substrate, on opposite sides of a gate electrode of a P-type metal-oxide-semiconductor (PMOS) disposed on the semiconductor substrate; forming an embedded silicon germanium layer inside the trenches; and forming a capping layer on the embedded silicon germanium layer, wherein the embedded silicon germanium layer and the capping layer are doped with boron (B). |
| 地址 |
Shanghai CN |
