发明名称 |
Low-E Panels With Ternary Metal Oxide Dielectric Layer and Method For Forming The Same |
摘要 |
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen. |
申请公布号 |
US2015232378(A1) |
申请公布日期 |
2015.08.20 |
申请号 |
US201514701053 |
申请日期 |
2015.04.30 |
申请人 |
Intermolecular Inc. |
发明人 |
Hassan Mohd Fadzli Anwar;Blacker Richard;Ding Guowen;Lao Jingyu;Le Minh Huu;Lu Yiwei;Nguyen Minh Anh Anh;Sun Zhi-Wen Wen |
分类号 |
C03C17/36;C23C14/18;C23C14/34;C23C14/08 |
主分类号 |
C03C17/36 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a low-e panel, the method comprising:
providing a transparent substrate; forming a metal oxide layer over the transparent substrate, wherein the metal oxide layer comprises oxygen, a first element, a second element, and a third element, wherein the first element is tin or zinc, the second element is strontium, and the third element is hafnium; and forming a reflective layer over the transparent substrate. |
地址 |
San Jose CA US |