SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

摘要

A semiconductor device is provided with an oxide semiconductor thin-film transistor (TFT); a calibration electrode that is positioned so as to face an oxide semiconductor layer with an insulating layer therebetween, and, when viewed from the direction of the substrate normal line, overlaps at least part of a gate electrode with the oxide semiconductor layer interposed therebetween; and a calibration voltage setting circuit that determines the voltage to be applied to the calibration electrode. The calibration voltage setting circuit is provided with: a monitor TFT that is configured using a second oxide semiconductor layer, which is substantially the same as the oxide semiconductor layer of the oxide semiconductor TFT; a detection circuit that is configured so as to be able to measure the device characteristics of the monitor TFT; and a voltage determination circuit that determines the voltage to be applied to the calibration electrode on the basis of the measured device characteristics.

主权项

1. A semiconductor device, comprising:
a substrate; an oxide semiconductor thin film transistor formed on said substrate and having a gate electrode, an oxide semiconductor layer facing said gate electrode with a first insulating layer therebetween, and a source electrode and a drain electrode connected to said oxide semiconductor layer; a calibration electrode facing said oxide semiconductor layer with a second insulating layer therebetween and overlapping, when viewed from a direction normal to the substrate, at least part of said gate electrode, said oxide semiconductor layer being interposed between said gate electrode and said calibration electrode; and a calibration voltage setting circuit that determines a voltage to be applied to said calibration electrode; wherein said calibration voltage setting circuit comprises:
a monitor thin film transistor formed on the substrate and comprising a second oxide semiconductor layer being made of the same oxide semiconductor material as the oxide semiconductor layer of said oxide semiconductor thin film transistor, said monitor thin film transistor having a gate electrode, a source electrode, and a drain electrode;a detection circuit that is configured to measure device characteristics of said monitor thin film transistor; anda voltage determination circuit that determines said voltage to be applied to the calibration electrode in accordance with said device characteristics that are measured by the detection circuit.