| 发明名称 |
PLASMA APPARATUS, MAGNETIC-FIELD CONTROLLING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD |
| 摘要 |
Embodiments of a plasma apparatus are provided. The plasma apparatus includes a processing chamber and a wafer chuck disposed in the processing chamber. The plasma apparatus also includes a target element located over the wafer chuck and an electromagnet array located over the target element and having a number of electromagnets. Some of the electromagnets in a magnetic-field zone of the electromagnet array are enabled to generate a magnetic field adjacent to the target element. The magnetic-field zone is moved during a semiconductor manufacturing process. |
| 申请公布号 |
US2015235823(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201414183670 |
申请日期 |
2014.02.19 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
CHI Chih-Chien;PAN Shing-Chyang;CHEN Kuan-Chia;CHANG Yao-Jen;HUANG Huang-Yi;HSIEH Ching-Hua |
| 分类号 |
H01J37/34;C23C14/35;C23C14/50;H01L21/285;C23C14/24;C23C14/54 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma apparatus, comprising:
a plasma chamber; a wafer chuck disposed in the plasma chamber; a target element located over the wafer chuck; and an electromagnet array, located over the target element, comprising a plurality of electromagnets, wherein some of the electromagnets in a magnetic-field zone of the electromagnet array are enabled to generate a magnetic field adjacent to the target element, wherein a location of the magnetic-field zone is adjusted by switching the electromagnets during a semiconductor manufacturing process. |
| 地址 |
Hsin-Chu TW |
