SPECIAL LAYOUT DESIGN PRINTED RECTANGULAR PATTERN AND IMPROVED PATTERN CRITICAL DIMENSION UNIFORMITY

摘要

Present example embodiments relate generally to semiconductor devices, masks, wafers, and methods of fabricating semiconductor devices, masks, and wafers. Example methods comprise providing a substrate having a photoresist layer. Example methods further comprise providing a mask having a substantially rectangular pattern and an elongated pattern, at least a portion of the elongated pattern positioned at least proximate to a corner of the substantially rectangular pattern, wherein the elongated pattern extends outwardly from the substantially rectangular pattern. Example methods further comprise forming a substantially rectangular shaped pattern on the photoresist layer resembling the substantially rectangular pattern using a cooperation of the substantially rectangular pattern and the elongated pattern.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate having a photoresist layer; providing a mask having a substantially rectangular pattern and an elongated pattern, at least a portion of the elongated pattern positioned at least proximate to a corner of the substantially rectangular pattern, wherein the elongated pattern extends outwardly from the substantially rectangular pattern; and forming a substantially rectangular shaped pattern on the photoresist layer resembling the substantially rectangular pattern of the mask using a cooperation of light exposure through the substantially rectangular pattern and the elongated pattern of the mask.