发明名称 Production Method For Polishing-Material Particles
摘要 A production method for polishing-material particles, comprising: forming an inner layer having, as a main component thereof, a salt of at least one element selected from Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th, and the alkali earth metals; adding a prepared aqueous solution, at a prescribed time, to a reaction solution in which the salt formed from the element is dispersed, to form an outer layer on the outer side of the inner layer; using solid-liquid separation to separate a polishing-material-particle precursor from the reaction solution, and the polishing-material-particle precursor is baked; and the percentage of Ce in the reaction solution in which the surface of the outer layer is formed is in the range of 60-90 mol% inclusive.
申请公布号 US2015232728(A1) 申请公布日期 2015.08.20
申请号 US201314426071 申请日期 2013.09.03
申请人 KONICA MINOLTA, INC. 发明人 Takahashi Atsushi;Ito Natsuki;Mizoguchi Keisuke;Maezawa Akihiro
分类号 C09K3/14 主分类号 C09K3/14
代理机构 代理人
主权项 1. A production method for polishing material particles, the method comprising: forming a salt of at least one element selected from the group consisting of Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th, and alkali earth metals and forming an inner layer of a precursor of the polishing material particle mainly composing the salt of the element; adding for a predetermined amount of time an aqueous solution prepared with the salt of at least one element selected from the group consisting of Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th, and alkali earth metals and a salt of Ce in a reaction solution in which the salt of the element formed in the inner layer forming is dispersed, and forming an outer layer of the precursor of the polishing material particle on an outer side of the inner layer, the outer layer including a salt of at least one element selected from the group consisting of Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th, and alkali earth metals and a salt of Ce; separating the precursor of the polishing material particle with the outer layer formed in the outer layer forming from the reaction solution; and baking the precursor of the polishing material particle obtained in the separating in the air or in an oxidizing atmosphere, wherein, the reaction solution which forms a surface of the precursor of the polishing material particle in the outer layer forming includes at least one element selected from the group consisting of Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th, and alkali earth metals and Ce, and a percentage of the Ce is 60 mol % or more and 90 mol % or less with respect to a total included amount of the element included in the reaction solution.
地址 Chiyoda-ku, Tokyo JP