发明名称 FIELD EFFECT TRANSISTOR SWITCHING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide ultra-fast, and ultra-low loss/high isolation switches.SOLUTION: A switching circuit comprises: a first switch including an n-channel transistor; and a second switch coupled with the first switch. The second switch includes: a p-channel switch transistor including a first source, a first drain, a first gate and a first body contact; and a p-channel transistor for discharge including a second source, a second drain, a second gate, and a second body contact. The first gate is coupled with the second drain. The first body contact is coupled with the second source. The second gate is coupled to a connection point with a first resistor and a second resistor that are coupled between the first drain and the first source.
申请公布号 JP2015149720(A) 申请公布日期 2015.08.20
申请号 JP20150019167 申请日期 2015.02.03
申请人 TRIQUINT SEMICONDUCTOR INC 发明人 GEORGE NOHRA
分类号 H03K17/687;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/088;H03K17/04 主分类号 H03K17/687
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