发明名称 SUBSTRATE FOR LIGHT-EMITTING DIODE
摘要 A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing an insulation reliability and high-humidity reliability of the substrate is provided.
申请公布号 US2015237708(A1) 申请公布日期 2015.08.20
申请号 US201514701730 申请日期 2015.05.01
申请人 NGK Insulators, Ltd. 发明人 YANO Shinsuke;TANI Makoto;NAKANISHI Hirokazu
分类号 H05K1/02;H05K1/05;H01L33/48 主分类号 H05K1/02
代理机构 代理人
主权项 1. A substrate for a light-emitting diode, comprising: a metal base, an insulation layer which comprises a dielectric material that mainly contains a ceramic and which is placed on at least one top of said metal base, and a top conductor which is placed on the top of said insulation layer on the side opposite to said metal base, wherein: the thickness (Tm) of said metal base in a thickness direction, which is defined as a direction intersecting perpendicularly with said at least one top of said metal base, is not less than 100 micrometers, the thickness (Tc) of said top conductor in said thickness direction is not less than 20 micrometers and 100 micrometers or less, and the thickness (Ti) of said insulation layer in said thickness direction and said thickness (Tc) of said top conductor in said thickness direction meet the relation expressed by a formula (1) shown below. [Math. 1] −40×Ti+260≦Tc≦−40×Ti+1620   (1)
地址 Nagoya-Shi JP