Creating An Embedded ReRam Memory From A High-K Metal Gate Transistor Structure

摘要

An embodiment of the present invention sets forth an embedded resistive memory cell that includes a first stack of deposited layers, a second stack of deposited layers, a first electrode disposed under a first portion of the first stack, and a second electrode disposed under a second portion of the first stack and extending from under the second portion of the first stack to under the second stack. The second electrode is disposed proximate to the first electrode within the embedded resistive memory cell. The first stack of deposited layers includes a dielectric layer, a high-k dielectric layer disposed above the dielectric layer, and a metal layer disposed above the high-k dielectric layer. The second stack of deposited layers includes a high-k dielectric layer formed simultaneously with the high-k dielectric layer included in the first stack, and a metal layer disposed above the high-k dielectric layer.

主权项

1. A method comprising:
forming a first electrode; forming a second electrode,
wherein the second electrode is electrically isolated from the first electrode; forming a first dielectric layer,
wherein the first dielectric layer is a part of a first stack, andwherein the first stack is disposed over the first electrode; and forming a second dielectric layer,
wherein a first portion of the second dielectric layer is a part of the first stack, andwherein a second portion of the second dielectric layer is a part of a second stack, andwherein the first stack and the second stack are disposed over the second electrode.