| 发明名称 |
SYSTEMS AND METHODS FOR IMPROVING WAFER ETCH NON-UNIFORMITY WHEN USING TRANSFORMER-COUPLED PLASMA |
| 摘要 |
A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one. |
| 申请公布号 |
US2015235808(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201414293547 |
申请日期 |
2014.06.02 |
| 申请人 |
Lam Research Corporation |
发明人 |
Kamp Tom;Sato Arthur;Paterson Alex |
| 分类号 |
H01J37/32;H01L21/67;H01L21/3065 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing system, comprising:
a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing; a gas supply system configured to supply gas to the processing chamber; a coil arranged outside of the processing chamber adjacent to the dielectric window; a radio frequency (RF) source configured to supply RF signals to the coil to create RF plasma in the processing chamber; and N flux attenuating portions arranged in a spaced pattern adjacent to the coil, wherein N is an integer greater than one. |
| 地址 |
Fremont CA US |
