METHOD FOR MANUFACTURING INSULATED GATE SWITCHING ELEMENT, AND INSULATED GATE SWITCHING ELEMENT

摘要

This method for manufacturing an insulated gate switching element has: a step for forming a second conductivity-type second region (27) in a surface of a semiconductor substrate by implanting a second conductivity-type impurity in the surface; a step for forming a second conductivity-type third region (26) on the surface by means of epitaxial growing, said third region having a lower second conductivity-type impurity concentration than the second region (27); and a step for forming a trench gate electrode (34b).