| 摘要 |
An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy comprises: a seed layer comprising a tungsten-based substance; a first ferromagnetic layer, which is positioned on the seed layer, and which comprises a boron-based substance and has vertical magnetic anisotropy; a tunneling barrier layer positioned on the first ferromagnetic layer; and a second ferromagnetic layer, which is positioned on the tunneling barrier layer, and which has vertical magnetic anisotropy, wherein the seed layer has a thickness of 1nm to 10nm. Therefore, use of the tungsten-based substance as the seed layer substance maintains crystallinity of the first ferromagnetic layer even at a high temperature of 350°C to 400C° and prevents the problem of reduction of vertical magnetic anisotropy, thereby providing an MTJ structure having improved thermal stability. |
