发明名称 |
OPTOELECTRONIC SEMICONDUCTOR CHIP, AND LIGHT SOURCE COMPRISING THE OPTOELECTRONIC SEMICONDUCTOR CHIP |
摘要 |
An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified. |
申请公布号 |
US2015236206(A1) |
申请公布日期 |
2015.08.20 |
申请号 |
US201314428952 |
申请日期 |
2013.09.06 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Gaertner Christian;Schlereth Thomas;Kaiser Stephan |
分类号 |
H01L33/38;H01L33/14;H01L33/08;H01L33/10 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
|
主权项 |
1. An optoelectronic semiconductor chip, comprising:
a semiconductor layer sequence having at least two active regions arranged one above another, wherein the active regions each have a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type and a radiation-emitting active layer arranged between the first semiconductor region and the second semiconductor region, a radiation exit surface, a mirror layer, which is arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface, and at least two electrical contacts, which are arranged at a side of the mirror layer facing away from the radiation exit surface. |
地址 |
Regensburg DE |