发明名称 OPTOELECTRONIC SEMICONDUCTOR CHIP, AND LIGHT SOURCE COMPRISING THE OPTOELECTRONIC SEMICONDUCTOR CHIP
摘要 An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.
申请公布号 US2015236206(A1) 申请公布日期 2015.08.20
申请号 US201314428952 申请日期 2013.09.06
申请人 OSRAM Opto Semiconductors GmbH 发明人 Gaertner Christian;Schlereth Thomas;Kaiser Stephan
分类号 H01L33/38;H01L33/14;H01L33/08;H01L33/10 主分类号 H01L33/38
代理机构 代理人
主权项 1. An optoelectronic semiconductor chip, comprising: a semiconductor layer sequence having at least two active regions arranged one above another, wherein the active regions each have a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type and a radiation-emitting active layer arranged between the first semiconductor region and the second semiconductor region, a radiation exit surface, a mirror layer, which is arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface, and at least two electrical contacts, which are arranged at a side of the mirror layer facing away from the radiation exit surface.
地址 Regensburg DE