METHOD OF MANUFACTURING MICROARRAY TYPE NITRIDE LIGHT EMITTING DEVICE

摘要

A method of manufacturing a microarray type nitride light emitting device includes forming a light emitting semiconductor layer by sequentially laminating a buffer layer, an n-type nitride contact layer, an active layer, and a p-type nitride contact layer on a substrate, forming a first transparent contact layer on the formed light emitting semiconductor layer, dividing a microarray type light emitting region through heat treatment of the first transparent contact layer through formation of a pattern, and connecting the divided light emitting regions by a second transparent contact layer.

主权项

1. A method of manufacturing a microarray type nitride light emitting device, comprising:
a light emitting semiconductor layer forming step of forming a light emitting semiconductor layer by sequentially laminating a buffer layer, an n-type nitride contact layer, an active layer, and a p-type nitride contact layer on a substrate; a first contact layer forming step of forming a first transparent contact layer on the formed light emitting semiconductor layer; a light emitting region dividing step of dividing a microarray type light emitting region through heat treatment of the first transparent contact layer through formation of a pattern; and a second contact layer forming step of connecting the divided light emitting regions by a second transparent contact layer.