主权项 |
1. A non-volatile memory device, comprising:
a well, disposed in a substrate; a plurality of word lines, arranged in an array, disposed on the substrate and extending in a first direction; a plurality of inter-poly dielectric films respectively between the substrate and the plurality of word lines; a plurality of floating gates, respectively disposed between the well and the plurality of inter-poly dielectric films; a plurality of tunnel oxide films, respectively disposed between the well and the plurality of floating gates; and a plurality of first bit lines and a plurality of second bit lines, arranged periodically, disposed over the plurality of word lines, and extending in a second direction, wherein a first distance from the first bit lines to the substrate is smaller than a second distance from the second bit lines to the substrate. |