SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided in which reliability of the semiconductor device is improved by improving an EM characteristic, a TDDB characteristic, and a withstand voltage characteristic of the semiconductor device. An average diameter of first vacancies in a lower insulating layer which configures an interlayer insulating film of a porous low-k film for embedding a wiring therein, is made smaller than an average diameter of second vacancies in an upper insulating layer, and thereby an elastic modulus is increased in the lower insulating layer. Further, a side wall insulating layer which is a dense layer including the first vacancies having an average diameter smaller than the second vacancies is formed on the surface of the interlayer insulating film exposed on a side wall of a wiring trench.

主权项

1. A semiconductor device, comprising:
an interlayer insulating film which is formed over a substrate and includes a first film and a second film formed over the first film; a first wiring which is embedded in a wiring trench formed in an upper surface of the interlayer insulating film; a via which is formed in a via hole passing through the interlayer insulating film under the first wiring and is coupled to a bottom surface of the first wiring; and a second wiring which is formed under the interlayer insulating film and is coupled to a bottom surface of the via, wherein a plurality of first vacancies is formed in the first film, and a plurality of second vacancies having an average diameter larger than the first vacancies is formed in the second film.