发明名称 Method For Manufacturing Semiconductor Device Using Mold Having Resin Dam And Semiconductor Device
摘要 The suppression of resin leakage is combined with the suppression of damage to the functional wiring area of a wiring board in forming an encapsulation resin. A method for manufacturing a semiconductor device includes the step of clamping a wiring board with a first mold and a second mold. The second mold includes: a flat portion contacting a wiring board; a recessed portion forming a cavity to form an encapsulation resin; and a projecting portion formed at a location spaced apart from the recessed portion on the flat portion, the projecting portion projecting on the first mold side, and extending along the first edge of the wiring board.
申请公布号 US2015235937(A1) 申请公布日期 2015.08.20
申请号 US201514704335 申请日期 2015.05.05
申请人 Renesas Electronics Corporation 发明人 Noda Takamitsu
分类号 H01L23/498;H01L23/544;H01L23/29 主分类号 H01L23/498
代理机构 代理人
主权项 1. A semiconductor device comprising: a wiring board having opposite first and second surfaces, the first surface including a first region and a second region surrounding the first region, the wiring board when seen in a plane view including a first edge; a semiconductor device mounted over the first region; an encapsulation resin formed over the first region and encapsulating the semiconductor device, the encapsulation resin not being formed over the second region; an external terminal formed on the second surface; and a dent formed in the second region at a location spaced apart from the first region, the dent extending along the first edge.
地址 Kawasaki-shi JP