发明名称 |
Real Time Semiconductor Process Excursion Monitor |
摘要 |
Semiconductor process excursions may be monitored by fabricating functional circuitry on a plurality of semiconductor devices and then testing the functional circuitry of the plurality of semiconductor devices using a sequence of test patterns. A cumulative failure curve may be determined that has points of discontinuity based on results of testing with the sequence of test patterns. A point of discontinuity magnitude at a selected location in the cumulative failure curve may be compared to an expected discontinuity magnitude. Process excursion analysis may be indicated when a point of discontinuity magnitude exceeds an expected magnitude threshold. |
申请公布号 |
US2015234000(A1) |
申请公布日期 |
2015.08.20 |
申请号 |
US201414180457 |
申请日期 |
2014.02.14 |
申请人 |
Texas Instruments Incorporated |
发明人 |
Butler Kenneth Michael;Carulli, JR. John Michael |
分类号 |
G01R31/26;G01R31/28 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for monitoring process excursions, the method comprising:
fabricating functional circuitry on a plurality of semiconductor devices; testing the functional circuitry of the plurality of semiconductor devices using a sequence of test stimuli; determining a cumulative failure curve having points of discontinuity based on results of testing with the sequence of test stimuli; comparing a point of discontinuity magnitude at a selected location in the cumulative failure curve to an expected discontinuity magnitude; and indicating that process excursion analysis should be done for the plurality of semiconductor devices when the point of discontinuity magnitude exceeds an expected magnitude threshold. |
地址 |
Dallas TX US |