发明名称 Real Time Semiconductor Process Excursion Monitor
摘要 Semiconductor process excursions may be monitored by fabricating functional circuitry on a plurality of semiconductor devices and then testing the functional circuitry of the plurality of semiconductor devices using a sequence of test patterns. A cumulative failure curve may be determined that has points of discontinuity based on results of testing with the sequence of test patterns. A point of discontinuity magnitude at a selected location in the cumulative failure curve may be compared to an expected discontinuity magnitude. Process excursion analysis may be indicated when a point of discontinuity magnitude exceeds an expected magnitude threshold.
申请公布号 US2015234000(A1) 申请公布日期 2015.08.20
申请号 US201414180457 申请日期 2014.02.14
申请人 Texas Instruments Incorporated 发明人 Butler Kenneth Michael;Carulli, JR. John Michael
分类号 G01R31/26;G01R31/28 主分类号 G01R31/26
代理机构 代理人
主权项 1. A method for monitoring process excursions, the method comprising: fabricating functional circuitry on a plurality of semiconductor devices; testing the functional circuitry of the plurality of semiconductor devices using a sequence of test stimuli; determining a cumulative failure curve having points of discontinuity based on results of testing with the sequence of test stimuli; comparing a point of discontinuity magnitude at a selected location in the cumulative failure curve to an expected discontinuity magnitude; and indicating that process excursion analysis should be done for the plurality of semiconductor devices when the point of discontinuity magnitude exceeds an expected magnitude threshold.
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