SEMICONDUCTOR LAMINATE AND SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laminate and a semiconductor device comprising a semiconductor layer that has an excellent surface quality and that consists of a Group-III-V compound semiconductor containing Sb as a Group-V element, and to provide a method of manufacturing the same.SOLUTION: A semiconductor laminate 10 comprises: a substrate 20 consisting of a Group-III-V compound semiconductor; and a buffer layer 30 arranged on and contacted with the substrate 20, and consisting of a Group-III-V compound semiconductor. The Group-III-V compound semiconductor configuring the buffer layer 30 contains Sb as a Group-V element. The buffer layer 30 includes an arsenic-containing region containing As of 1×10cmor more and 1×10cmor less.