发明名称 METHODS OF FORMING PATTERNS
摘要 PROBLEM TO BE SOLVED: To provide novel methods of forming patterned masks.SOLUTION: A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features 16, 18. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
申请公布号 JP2015149473(A) 申请公布日期 2015.08.20
申请号 JP20140259507 申请日期 2014.12.22
申请人 MICRON TECHNOLOGY INC;DOW GLOBAL TECHNOLOGIES LLC;ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 WILLIAM R BROWN;ADAM OLSON;KAVERI JAIN;HO SEOP EOM;XUE GLORIA CHEN;NIK MIRIN;DAN MILLWARD;PETER TREFONAS III;PHILLIP DENE HUSTAD;JONG KEUN PARK;CHRISTOPHER NAM LEE
分类号 H01L21/3065;C23C14/04;C23C16/04;G03F7/40;H01L21/336;H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/3065
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