摘要 |
<p>The complementary-symmetry metal-oxide-semiconductor integrated differential wide-band clock generator, comprises an adjusted diode block (4) and n-channel metal-oxide-semiconductor field-effect transistor (MNi) which has a source terminal (SNi), a drain terminal and a gate terminal. A control circuit is provided for the n-channel metal-oxide-semiconductor field-effect transistor. An inductance circuit comprises a metallic layer formed inductance element (L1,L2).</p> |