发明名称 レジストパターン形成方法
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a negative pattern with a reduced environmental influence can be formed. <P>SOLUTION: The method for forming a resist pattern includes: a step (1) of forming a resist film by applying on a support body a resist composition, which comprises a base component showing increase in the solubility with an alkali developing solution by an action of an acid, a photo-base generator component generating a base by exposure, and an acidic compound component; a step (2) of forming a protective film by applying a composition for forming a protective film on the resist film; a step (3) of exposing the resist film and the protective film; a step (4) of, after the step (3), baking to neutralize a base generating from the photobase generator component by exposure with the acidic compound component in an exposed portion and to increase the solubility of the base component with an alkali developing solution by an action of the acidic compound component in an unexposed portion; and a step (5) of forming a negative resist pattern by developing the resist film with an alkali to dissolve and remove the unexposed portion. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5764478(B2) 申请公布日期 2015.08.19
申请号 JP20110256119 申请日期 2011.11.24
申请人 東京応化工業株式会社 发明人 仁藤 豪人;中村 剛;清水 宏明;横谷 次朗;並木 拓海
分类号 G03F7/038;G03F7/004;G03F7/039;G03F7/11 主分类号 G03F7/038
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