发明名称 窒化物半導体発光素子
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which improves the catastrophic optical damage (COD) level after aging. <P>SOLUTION: In a nitride semiconductor light emitting element, a coat film is formed on a light emission part. In the nitride semiconductor light emitting element, the light emission part is formed by a nitride semiconductor, and the coat film is made of oxynitride of aluminium. The content of oxygen differs in the thickness direction of the nitride semiconductor light emitting element. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5766659(B2) 申请公布日期 2015.08.19
申请号 JP20120145435 申请日期 2012.06.28
申请人 发明人
分类号 H01S5/028;H01S5/343 主分类号 H01S5/028
代理机构 代理人
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