Fabrication of silicon and germanium nanowires integrated on a substrate

摘要

The method involves oxidizing bars based on semiconducting material e.g. silicon, where bars of a block are protected by an oxidation mask. The oxidation mask is removed, and the bars are removed based on the semiconducting material in the block, and nanowires (133) are protected based on the semiconducting material. The bars are oxidized based on another semiconducting material e.g. silicon-germanium compound/alloy, so as to form other nanowires (134).