| 摘要 |
<p>A vapor deposition device includes a vapor deposition source (60) having a plurality of vapor deposition source openings (61) that discharge vapor deposition particles (91), a limiting unit (80) having a plurality of limiting openings (82), and a vapor deposition mask (70) in which a plurality of mask openings (71) are formed only in a plurality of vapor deposition regions (72) where the vapor deposition particles that have passed through a plurality of limiting openings reach. The plurality of vapor deposition regions are arranged along a second direction that is orthogonal to the normal line direction of the substrate (10) and the movement direction of the substrate, with non-vapor deposition regions (73) where the vapor deposition particles do not reach being sandwiched therebetween. Mask openings through which the vapor deposition particles pass are formed at different positions in the movement direction of the substrate from the positions of the non-vapor deposition regions located on a straight line parallel to the second direction, as viewed along the normal line direction of the substrate. Accordingly, it is possible to stably form a vapor deposition coating film in which edge blurring is suppressed at a desired position on a substrate.</p> |
