| 摘要 |
The invention relates to a power semiconductor arrangement, comprising a power semiconductor module (1) and a control driving device (2), wherein the power semiconductor module (1) comprises a plurality of power semiconductor devices (3), a first main module contact (4), a first auxiliary contact (5), a second main module contact (6) and a control module contact (7), each power semiconductor device (3) comprises a first main device contact, a first auxiliary device contact, a second main device contact and a control device contact, whereby all first main device contacts are connected to the first main module contact (4), all first auxiliary device contacts are connected to the first auxiliary module contact (5), all second main device contacts are connected to the second main module contact (6), and all control main device contacts are connected to the control module contact (7), the control driving device (2) is configured for switching on the power semiconductor module (1) by applying a turn-on signal to the control module contact (7) and for switching off the power semiconductor module (1) by applying a turn-off signal to the control module contact (7). |
