| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase a switching speed of an IGBT in which a P well region is formed on a principal surface of a semiconductor substrate, and to reduce an occurrence of a noise. <P>SOLUTION: A semiconductor device comprises: a P well region 5 provided on a principal surface of a semiconductor substrate between a plurality of IGBTs formed on the principal surface of the semiconductor substrate; and a charge storage layer 13 having a negative charge and provided immediately above the P well region 5 via an insulation film. Thereby, the negative charge can attract electron holes from a rear face side to a principal surface side of the semiconductor substrate, and prevent an increase in on-resistance of the IGBT without increasing an impurity concentration of the P well region 5. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
