| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer efficiently with no waste by measuring the resistivity in the state of ingot in order to provide a semiconductor wafer having a desired resistivity efficiently, and then manufacturing a semiconductor wafer based on the resistivity thus measured. <P>SOLUTION: In the method of manufacturing a semiconductor wafer from a single crystal ingot, resistivity distribution on the side surface of the single crystal ingot is measured in the direction of the growth axis. A desired resistivity position indicating a desired resistivity is then specified, and a block of a predetermined length is cut out and a semiconductor wafer is sliced therefrom. The resistivity in the direction of the growth axis can be measured by applying a resistivity measurement method based on the so-called 4 probe method. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
