| 摘要 |
The present technique relates to a DC-DC converter which includes: a substrate which has a switching device region defined by a device isolation layer; a transistor formed on the switching device region; a landing plate formed on the device isolation layer; a capacitor which is formed on the landing plate, and includes a bottom plate, a dielectric layer, and a top plate; a multilayered metal line which is located on the upper part of the transistor, and is connected to the transistor; and an interconnection part which is connected to the multilayered metal line to electrically connect the transistor and the capacitor. |
