发明名称 METHOD FOR PRODUCING NANOCARBON FILM AND NANOCARBON FILM
摘要 The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.
申请公布号 EP2907790(A1) 申请公布日期 2015.08.19
申请号 EP20130847732 申请日期 2013.08.07
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 KAWAI, MAKOTO;KUBOTA, YOSHIHIRO
分类号 C01B31/04;B82Y30/00;B82Y40/00;C01B31/02;C30B29/00;C30B29/02;C30B29/36;C30B31/22;C30B33/06;H01L21/02;H01L21/324;H01L21/762 主分类号 C01B31/04
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